IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PC30UDPBF
• Description: IGBT W/DIODE 600V 23A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PC30UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 23A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1100 pF
• Current, Collector: 23 A
• Energy Rating: 0.54 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 100 W
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Speed, Switching: 8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.52 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 23A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 23A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Current Rating: 23A
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PC30UDPBF

IRG4PC30UD
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
V
fe
E
V
on
off
ts
ts
(BR)CES
GE(th)
oes
2
CE(on)
FM
ies
res
g
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
3.0
3.1
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 1100 ----
----
----
----
----
----
----
----
----
----
----
0.63
1.95
2.52
2.09
0.38
0.16
0.54
0.89
120
180
220
180
120
---- 2500
---- ±100
-11
8.6
1.4
1.3
8.1
3.5
5.6
----
----
----
50
18
40
21
91
80
40
22
13
73
14
42
80
80
250
140
130
120
180
600
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
2.1
6.0
1.7
1.6
0.9
----
6.0
---- mV/°C V
75
12
27
60
10
V/°C
A/µs T
nA
µA
nC
mJ
mJ
nH
nC
V
V
ns
ns
pF
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 12A
= 23A
= 12A, T
= 12A
= 12A, T
= 12A
= 25°C
= 12A, V
= 12A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 15V, R
= 15V, R
= ±20V
= 15V
= 0V
= 30V
= 400V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
= 150°C
C
C
= 150°C
See Fig.
See Fig.
Conditions
Conditions
= 1.0mA
= 250µA
G
G
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V
= 600V, T
= 23
= 23
= 12A
14
15
17
16
See Fig. 8
See Fig. 7
www.irf.com
See Fig. 2, 5
See Fig. 13
di/dt 200A/µs
V
J
I
GE
F
V
= 150°C
R
= 12A
= 15V
= 200V