FII30-12E IXYS, FII30-12E Datasheet - Page 3

• Manufacturer Part Number: FII30-12E
• Description: IGBT PHASE TOP ISOPLUS I4-PAC-5
• Manufacturer: IXYS

Specifications of FII30-12E

• Configuration: Half Bridge
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 20A
• Current - Collector (ic) (max): 33A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 1.2nF @ 25V
• Power - Max: 150W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 33A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS i4-Pac
• Pin Count: 5
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
I
I
V
C
C
GE
80
60
40
20
80
60
40
20
15
12
A
A
V
0
0
9
6
3
0
0
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
V
CE
T
VJ
= 20 V
= 25°C
1
20
5
V
I
C
2
CE
T
= 600 V
= 20 A
VJ
40
= 25°C
10
3
60
V
V
CE
4
GE
T
V
15
Q
VJ
GE
G
= 125°C
80
= 17 V
5
V
nC
15 V
13 V
11 V
V
9 V
100
20
6
I
I
C
RM
I
60
50
40
30
20
10
40
30
20
10
A
F
A
0
0
50
40
30
20
10
0
0
A
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
0
I
0
RM
T
VJ
= 125°C
1
200
free wheeling diode
free wheeling diode
1
2
T
VJ
400
= 125°C
3
T
V
I
F
VJ
R
2
= 15 A
= 600 V
= 125°C
600
V
-di/dt
GE
4
V
FII 30-12E
V
CE
= 17 V
F
800
T
A/µs
3
VJ
5
= 25°C
15 V
FII30-12E
13 V
11 V
V
V
9 V
1000
t
rr
6
200
150
100
50
0
ns
4
3 - 4
t
rr