FII30-12E IXYS, FII30-12E Datasheet
FII30-12E
Manufacturer Part Number
FII30-12E
Description
IGBT PHASE TOP ISOPLUS I4-PAC-5
Manufacturer
IXYS
Datasheet
1.FII30-12E.pdf
(4 pages)
Specifications of FII30-12E
Configuration
Half Bridge
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 20A
Current - Collector (ic) (max)
33A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
1.2nF @ 25V
Power - Max
150W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
33A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS i4-Pac
Pin Count
5
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPT
Phaseleg Topology
in ISOPLUS i4-PAC
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IGBTs
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
thJH
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
with heat transfer paste
Inductive load, T
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
CE
GE
= 20 A; V
= 0.6 mA; V
= 25°C
= 90°C
= 25°C
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 0 V; V
= 25 V; V
= ± 15 V; R
= 600 V; I
= ± 15 V; R
CES
; V
GE
GE
GE
GE
GE
C
= 15 V; T
GE
GE
= ± 20 V
G
= 0 V; T
G
= 20 A
= 0 V; f = 1 MHz
= ± 15 V; R
= V
= 68 Ω; T
= 68 Ω
= 15 V; I
VJ
TM
= 125°C
CE
T
T
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
VJ
= 20 A
G
= 125°C
= 68 Ω; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
205
105
320
175
100
typ.
2.4
2.8
0.2
4.1
1.5
1.2
1.2
1200
± 20
V
150
33
20
CES
10
40
3
5
4
1
2
max.
200
0.2 mA
2.9
6.5
0.8 K/W
K/W
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
Features
• NPT
• HiPerFRED
• ISOPLUS i4-PAC
Applications
• single phaseleg
• H bridge
• three phase bridge
C25
- positive temperature coefficient of
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated back surface
- low coupling capacity between pins
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
- buck-boost chopper
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
- AC drives
- controlled rectifier
saturation voltage for easy paralleling
performance in resonant circuits
and heatsink
CES
CE(sat) typ
1
3
IGBT
5
TM
= 33 A
= 1200 V
= 2.4 V
diode
FII 30-12E
TM
package
1 - 4
Related parts for FII30-12E
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IGBT PHASE LEG ISOPLUS I4-PAC-5
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Fast Igbt Chopper In Isoplus I4-pac
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
FII30-12E Summary of contents
Page 1
... off MHz ies 600 Gon thJC R with heat transfer paste thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Maximum Ratings 1200 ± 125° CES = 68 Ω 125° 150 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... pin - backside metal S A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Maximum Ratings 25 15 Characteristic Values min. typ. max. 2.5 3.0 1.9 = 125°C ...
Page 3
... Q G FII 30-12E 125° Fig. 2 Typ. output characteristics 125° Fig. 4 Typ. forward characteristics of free wheeling diode 125° 600 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 25° 200 ns 150 100 50 FII30-12E 0 800 1000 A/µ ...
Page 4
... Fig.10 Typ. turn off energy and switching times versus gate resistor 10 1 single pulse 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 400 t d(off) ns 350 300 t 250 200 150 100 1250 ns 1000 t t d(off) 750 500 250 Ω 200 250 diode IGBT FII30-12E ...