BYV29B-600,118 NXP Semiconductors, BYV29B-600,118 Datasheet - Page 6

DIODE RECT 600V 9A SOT404

BYV29B-600,118

Manufacturer Part Number
BYV29B-600,118
Description
DIODE RECT 600V 9A SOT404
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV29B-600,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.25V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
9A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.45 V at 20 A
Recovery Time
60 ns
Forward Continuous Current
9 A
Max Surge Current
77 A
Reverse Current Ir
50 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057852118
BYV29B-600 /T3
BYV29B-600 /T3
Philips Semiconductors
9397 750 11884
Product data
Fig 4. Forward current as a function of forward
Fig 6. Reverse current as a function of rate of change
I rrm
(A)
10
(A)
10
I F
10
-1
36
24
16
-2
1
8
voltage; typical values.
of forward current; typical values.
0
0
1
T j = 150 C
T j = 25 C
T j = 25 C
T j = 100 C
0.4
0.8
typ
I F = 10 A
10
1.2
-dI F /d t (A/ s)
I F = 1 A
max
1.6
003aaa450
003aaa449
V F (V)
10
2
Rev. 01 — 11 August 2003
2
Fig 5. Maximum reverse recovery time as a function
Fig 7. Maximum reverse recovery charge as a
(nC)
(ns)
Q rr
t rr
10
10
10
10
10
10
1
3
2
of rate of change of forward current.
function of rate of change of forward current.
2
3
10
1
T j = 25 C
T j = 150 C
I F = 2 A
I F = 10 A
I F = 1 A
I F = 10 A
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
10
BYV29B-600
Rectifier diode ultrafast
150 C
25 C
-dI F /d t (A/ s)
-dI F /d t (A/ s)
003aaa448
003aaa452
10
10
2
2
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