BYV29B-600,118 NXP Semiconductors, BYV29B-600,118 Datasheet - Page 4

• Manufacturer Part Number: BYV29B-600,118
• Description: DIODE RECT 600V 9A SOT404
• Manufacturer: NXP Semiconductors

Specifications of BYV29B-600,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 9A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.45 V at 20 A
• Recovery Time: 60 ns
• Forward Continuous Current: 9 A
• Max Surge Current: 77 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057852118; BYV29B-600 /T3; BYV29B-600 /T3

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 11884
Product data
Symbol Parameter
R
R
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10
10 -
10 -
10 -
1
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
2
1
3
10 -
6
5.1 Transient thermal impedance
10 -
5
10 -
4
Rev. 01 — 11 August 2003
10 -
3
Conditions
Figure 3
in free air
10 -
2
10 -
1
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
BYV29B-600
Rectifier diode ultrafast
P
1
Min Typ Max Unit
-
-
t p
t p (s)
-
50
003aaa453
t
2.5
-
10
4 of 12
K/W
K/W