STTH212S STMicroelectronics, STTH212S Datasheet - Page 4

• Manufacturer Part Number: STTH212S
• Description: DIODE ULT FAST 1200V 2A SMC
• Manufacturer: STMicroelectronics

Specifications of STTH212S

• Voltage - Forward (vf) (max) @ If: 1.75V @ 2A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.75 V
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4754-2

1 Electrical characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
900
800
700
600
500
400
300
200
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
0
t rr (ns)
Z th(j-a) /R th(j-a)
0
0
S
FACTOR
S
I F =0.5 x I F(AV)
V
T
Cu
I
25
j
SMC
50
F
R
=125° C
=1cm²
=I
=600V
F( AV)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
Reverse recovery time versus dI
(typical values)
Softness factor versus dI
(typical values)
I F =2 x I F(AV)
100
50
CU
1.E+00
= 1cm
75
150
I F =I F(AV)
I F =I F(AV)
100
dl /dt(A/µs)
200
dl /dt(A/µs)
F
F
2
1.E+01
)
125
250
t p (s)
150
300
175
350
1.E+02
200
400
F
T j =125 °C
V R =600V
/dt
225
450
1.E+03
250
500
F
/dt
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
11
10
1400
1200
1000
9
8
7
6
5
4
3
2
1
0
800
600
400
200
25
I
RM
0
0
0
Q rr (nC)
(A)
V
T
j
R
=125° C
=600V
20
V
T
j
R
=125°C
50
=600V
S
Reverse recovery current versus
dI
Reverse recovery charges versus
dI
parameters versus junction
temperature
FAC TO R
I
R M
Q
40
F
F
100
R R
/dt (typical values)
/dt (typical values)
50
I
I
F
F
=0. 5 x I
=0. 5 x I
60
150
F( AV
F( AV
I
F
=2 x I
)
)
80
dl /dt(A/µs)
200
I
F
F
F( AV)
=I
I
F
F( AV)
=0. 5 x I
I
I
F
F
=I
=I
100
75
F( AV)
F( AV)
I
I
250
F
F
dl /dt(A/µs)
=2 x I
=2 x I
F( AV)
T j (°C)
F
F( AV)
F( AV)
120
300
140
350
100
R ef er ence:T
160
400
V
I
F
R
=I
=600V
STTH212
F( AV)
180
450
j
=125° C
500
200
125