STTH212S STMicroelectronics, STTH212S Datasheet - Page 3

• Manufacturer Part Number: STTH212S
• Description: DIODE ULT FAST 1200V 2A SMC
• Manufacturer: STMicroelectronics

Specifications of STTH212S

• Voltage - Forward (vf) (max) @ If: 1.75V @ 2A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.75 V
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4754-2

STTH212
Table 4.
Figure 1.
Figure 3.
Symbol
V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
t
t
FP
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
rr
fr
0.00
Z th(j-a) /R th(j-a)
P(W)
L
DO-201AD
leads
0.25
=10mm
Reverse recovery
time
Forward recovery
time
Forward recovery
voltage
Dynamic Electrical Characteristics
Conduction losses versus average
forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
L
0.50
Leads
1.E+00
Parameter
δ = 0.05
0.75
= 10mm)
1.00
δ = 0.1 δ = 0.2
I
F(AV)
1.E+01
1.25
t p (s)
(A)
1.50
T
T
j
j
δ = 0.5
1.75
= 25°C
= 25°C
1.E+02
δ
2.00
=tp/T
δ = 1
2.25
T
I
I
V
F
F
FR
tp
1.E+03
= 1A dI
= 2A
2.50
= 1.1 x V
Test conditions
F
dI
/dt = -100 A/µs V
Figure 2.
Figure 4.
F
Fmax
/dt = 50 A/µs
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
45
40
35
30
25
20
15
10
5
0
1.E-01
0.0
I
Z th(j-a) /R th(j-a)
FM
S
(A)
Cu
SMB
=1cm²
0.5
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
CU
1.0
1.E+00
R
=30V
= 1cm
(typical values)
T =125°C
j
1.5
(maximum values)
2
2.0
T =125°C
1.E+01
j
)
Min.
t p (s)
2.5
1 Electrical characteristics
V
FM
(V)
(maximum values)
3.0
Typ
1.E+02
T =25°C
j
3.5
Max.
500
75
30
4.0
1.E+03
4.5
Unit
ns
ns
V
3/9