PMEG3015EJ,115 NXP Semiconductors, PMEG3015EJ,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG3015EJ,115
• Description: SCHOTTKY RECT 30V 1.5A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG3015EJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 550mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4128-2; 934059004115; PMEG3015EJ T/R; PMEG3015EJ T/R

NXP Semiconductors
PMEG3015EH_EJ_3
Product data sheet
Fig 1.
Fig 3.
(mA)
I
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
10
10
10
−1
1
4
3
2
0
Forward current as a function of forward
voltage; typical values
T
Diode capacitance as a function of reverse voltage; typical values
amb
amb
amb
amb
amb
amb
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
= 25 °C; f = 1 MHz
(1)
0.1
(2)
0.2
(3)
(4)
0.3
(pF)
(5)
C
d
0.4
140
120
100
80
60
40
20
0
0
V
F
0.5
006aaa293
(V)
5
Rev. 03 — 13 January 2010
0.6
10
PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low V
15
Fig 2.
(μA)
I
R
20
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
10
10
−1
−2
1
6
5
4
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
25
006aaa295
V
R
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
5
(V)
30
(1)
(2)
(3)
(4)
(5)
F
10
MEGA Schottky barrier rectifiers
15
20
25
© NXP B.V. 2010. All rights reserved.
V
R
006aaa294
30
(V)
35
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