PMEG3015EJ,115 NXP Semiconductors, PMEG3015EJ,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG3015EJ,115
• Description: SCHOTTKY RECT 30V 1.5A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG3015EJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 550mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4128-2; 934059004115; PMEG3015EJ T/R; PMEG3015EJ T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMEG3015EH_EJ_3
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
[3]
Table 8.
T
[1]
Symbol Parameter
T
T
Symbol
R
R
Symbol
V
I
C
R
amb
amb
stg
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
Pulse test: t
= 25
°
ambient temperature
storage temperature
C unless otherwise specified.
Limiting values
Thermal characteristics
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
p
≤ 300 μs; δ ≤ 0.02.
PMEG3015EH
PMEG3015EJ
PMEG3015EH
PMEG3015EJ
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 03 — 13 January 2010
rating are available on request.
…continued
PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low V
Conditions
I
I
I
I
I
I
V
V
V
F
F
F
F
F
F
R
R
R
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 A
= 1.5 A
= 10 V
= 30 V
= 1 V; f = 1 MHz
Conditions
Conditions
in free air
F
MEGA Schottky barrier rectifiers
[1][2]
[2][3]
[1][2]
[2][3]
[1]
[1]
[1]
[1]
[1]
[1]
Min
−65
−65
Min
-
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Typ
125
185
255
330
400
440
60
400
60
© NXP B.V. 2010. All rights reserved.
Max
+150
+150
Max
330
150
350
150
60
55
Max
160
220
290
380
480
550
150
1000
72
Unit
°C
°C
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
mV
mV
mV
mV
μA
μA
pF
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