PMEG6010CEH,115 NXP Semiconductors, PMEG6010CEH,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG6010CEH,115
• Description: SCHOTTKY RECT 60V 1A SOD123F
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010CEH,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 660mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 68pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 830 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4104-2; 934061056115; PMEG6010CEH T/R

NXP Semiconductors
7. Characteristics
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Table 8.
T
[1]
Symbol
V
I
C
R
amb
F
d
Pulse test: t
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Characteristics
p
300 s;
PMEG6010CEH; PMEG6010CEJ
Rev. 02 — 27 March 2007
0.02.
Conditions
I
I
I
I
I
I
V
V
V
V
F
F
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 700 mA
= 1 A
= 5 V
= 10 V
= 60 V
= 1 V; f = 1 MHz
1 A very low V
[1]
F
MEGA Schottky barrier rectifiers
Min
-
-
-
-
-
-
-
-
-
-
Typ
210
270
350
460
510
570
0.8
1.1
11
60
© NXP B.V. 2007. All rights reserved.
Max
250
310
400
530
580
660
-
-
50
68
Unit
mV
mV
mV
mV
mV
mV
pF
A
A
A
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