BAS19,215 NXP Semiconductors, BAS19,215 Datasheet - Page 7

• Manufacturer Part Number: BAS19,215
• Description: DIODE GEN-PURP 120V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS19,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 100V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4860-2; 933502020215; BAS19 T/R; BAS19 T/R; BAS19,215

NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
handbook, full pagewidth
t r
t p
t
D.U.T.
10%
I F
I F
Ω
t rr
R = 50
S
SAMPLING
t
OSCILLOSCOPE
Ω
R = 50
V = V
I x R
R
F
S
i
(1)
90%
V R
MGA881
input signal
output signal
(1) I
= 3 mA.
R
Fig.8 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
7