BAS19,215 NXP Semiconductors, BAS19,215 Datasheet - Page 5

• Manufacturer Part Number: BAS19,215
• Description: DIODE GEN-PURP 120V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS19,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 100V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4860-2; 933502020215; BAS19 T/R; BAS19 T/R; BAS19,215

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 20
handbook, halfpage
handbook, full pagewidth
General purpose diodes
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
j
I FSM
(mA)
= 25 °C prior to surge.
(A)
10
I F
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T amb (
o
C)
MBG442
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
600
400
200
I F
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
BAS19; BAS20; BAS21
10
3
1
(1)
(2)
t p (µs)
V F (V)
Product data sheet
(3)
MBG384
MBG703
10
2
4