DAP222T1 ON Semiconductor, DAP222T1 Datasheet - Page 2
DAP222T1
Manufacturer Part Number
DAP222T1
Description
DIODE SWITCH DUAL CA 80V SOT416
Manufacturer
ON Semiconductor
Datasheet
1.DAP222G.pdf
(5 pages)
Specifications of DAP222T1
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
DAP222T1OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DAP222T1G
Manufacturer:
ON Semiconductor
Quantity:
5
Company:
Part Number:
DAP222T1G
Manufacturer:
ON
Quantity:
30 000
1. t = 1 mS
2. t
3. trr Test Circuit for DAP202U in Figure 5.
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
100
rr
1.0
0.1
10
Test Circuit for DAP222 in Figure 4.
0.2
Characteristic
0.4
Figure 1. Forward Voltage
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
DAP202U
0.6
DAP222
1.75
0.75
1.25
TYPICAL ELECTRICAL CHARACTERISTICS
T
1.5
Symbol
1.0
0.8
A
(T
t
= 25°C
t
rr
V
C
tt
V
0
I
A
(2)
(3)
R
R
F
D
= 25°C)
T
A
= −40°C
1.0
I
F
I
DAP222, DAP202U
F
Figure 3. Diode Capacitance
= 5.0 mA, V
= 5.0 mA, V
http://onsemi.com
2
V
R
, REVERSE VOLTAGE (VOLTS)
1.2
V
R
2
R
R
= 6.0 V, f = 1.0 MHz
= 6.0 V, R
= 6.0 V, R
I
I
0.001
F
Condition
R
V
0.01
4
1.0
0.1
= 100 mA
R
10
= 100 mA
= 70 V
0
L
L
= 100 W, I
= 50 W, I
6
10
Figure 2. Reverse Current
rr
V
rr
R
= 0.1 I
= 0.1 I
, REVERSE VOLTAGE (VOLTS)
T
T
T
T
A
A
T
A
A
R
20
R
= 150°C
= 125°C
A
= 55°C
= 25°C
= 85°C
8
Min
80
−
−
−
−
−
30
Max
10.0
0.1
1.2
3.5
4.0
−
40
mAdc
Unit
Vdc
Vdc
pF
ns
50