BYV34-600,127 NXP Semiconductors, BYV34-600,127 Datasheet - Page 3

• Manufacturer Part Number: BYV34-600,127
• Description: DIODE RECT DUAL 600V 20A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV34-600,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.48V @ 20A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 20 A
• Max Surge Current: 132 A
• Configuration: Dual Common Cathode
• Recovery Time: 60 ns
• Forward Voltage Drop: 1.48 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060591127; BYV34-600; BYV34-600

NXP Semiconductors
6. Characteristics
Table 5.
T
BYV34-600_1
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
F
FR
r
= 25 C unless otherwise specified.
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
6
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
10
5
10
Conditions
I
I
V
V
I
see
I
dI
I
dI
see
I
see
F
F
F
F
F
F
R
R
4
F
F
= 10 A; T
= 20 A; see
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
/dt = 100 A/ s; see
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 4
Rev. 01 — 4 October 2007
j
F
R
R
= 150 C; see
/dt = 10 A/ s;
R
10
j
Figure 2
= 100 C
30 V; dI
30 V;
3
30 V;
j
= 100 C;
Figure 3
F
/dt = 20 A/ s;
Figure 2
10
2
10
1
Min
-
-
-
-
-
-
-
-
Dual rectifier diode ultrafast
P
Typ
0.92
1.07
10
0.2
40
50
3
3.2
1
BYV34-600
t
p
T
© NXP B.V. 2007. All rights reserved.
t
p
001aag912
(s)
Max
1.16
1.48
50
0.6
70
60
5
-
=
t
T
t
p
10
Unit
V
V
mA
nC
ns
A
V
A
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