BYV34-600,127 NXP Semiconductors, BYV34-600,127 Datasheet - Page 2

• Manufacturer Part Number: BYV34-600,127
• Description: DIODE RECT DUAL 600V 20A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV34-600,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.48V @ 20A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 20 A
• Max Surge Current: 132 A
• Configuration: Dual Common Cathode
• Recovery Time: 60 ns
• Forward Voltage Drop: 1.48 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060591127; BYV34-600; BYV34-600

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
5. Thermal characteristics
Table 4.
BYV34-600_1
Product data sheet
Type number
BYV34-600
Symbol
V
V
V
I
I
I
T
T
Symbol
R
R
O(AV)
FRM
FSM
stg
j
RRM
RWM
R
th(j-mb)
th(j-a)
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient in free air
Ordering information
Limiting values
Thermal characteristics
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Conditions
square waveform;
T
square waveform;
T
t = 25 s; square waveform; = 0.5;
T
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
mb
mb
mb
Rev. 01 — 4 October 2007
138 C
107 C; both diodes conducting
107 C; per diode
Conditions
with heatsink compound;
per diode; see
with heatsink compound;
both diodes conducting
= 1.0;
= 0.5;
Figure 1
Min
-
-
-
Dual rectifier diode ultrafast
Min
-
-
-
-
-
-
-
-
40
BYV34-600
Typ
-
-
60
© NXP B.V. 2007. All rights reserved.
Max
600
600
600
20
20
120
132
+150
150
Max
2.4
1.6
-
Version
SOT78
Unit
V
V
V
A
A
A
A
Unit
K/W
K/W
K/W
C
C
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