BAW56,215 NXP Semiconductors, BAW56,215 Datasheet - Page 6

• Manufacturer Part Number: BAW56,215
• Description: DIODE SW DBL 90V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAW56,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 90V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1626-2; 933098990215; BAW56 T/R

NXP Semiconductors
BAV756S_BAW56_SER_5
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of reverse
(mA)
(1) T
(2) T
(3) T
(4) T
( A)
(1) T
(2) T
(3) T
(4) T
I
I
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
voltage; typical values
voltage; typical values
0.2
0
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
(1)
20
(2)
0.6
(1)
(2)
(3)
(4)
(3)
40
(4)
60
1.0
V
80
F
006aab109
006aab110
(V)
V
R
(V)
Rev. 05 — 26 November 2007
100
1.4
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
BAV756S; BAW56 series
I
FSM
(A)
(pF)
10
C
10
2.5
2.0
1.5
1.0
0.5
d
10
1
0
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
1
j
= 25 C; prior to surge
5
10
amb
= 25 C
10
High-speed switching diodes
10
2
15
10
© NXP B.V. 2007. All rights reserved.
3
20
t
p
V
( s)
mbg704
mbh191
R
(V)
10
25
4
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