BAW56,215 NXP Semiconductors, BAW56,215 Datasheet - Page 4

• Manufacturer Part Number: BAW56,215
• Description: DIODE SW DBL 90V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAW56,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 90V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1626-2; 933098990215; BAW56 T/R

NXP Semiconductors
6. Thermal characteristics
BAV756S_BAW56_SER_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
Symbol
I
I
P
Per device
I
T
T
T
Symbol
Per diode
R
FRM
FSM
F
j
amb
stg
tot
th(j-a)
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Single diode loaded.
j
= 25 C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
forward current
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
BAW56
BAW56M
BAW56W
Rev. 05 — 26 November 2007
…continued
BAV756S; BAW56 series
Conditions
square wave
T
T
T
T
T
T
T
T
T
T
T
T
Conditions
in free air
s
amb
amb
s
s
amb
s
amb
amb
s
s
amb
t
t
t
p
p
p
= 60 C
= 60 C
= 90 C
= 60 C
= 60 C
= 90 C
= 1 s
= 1 ms
= 1 s
25 C
25 C
25 C
25 C
25 C
25 C
High-speed switching diodes
[1]
[2]
[3]
[4]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
Typ
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
500
4
1
0.5
350
250
250
350
170
200
100
125
75
100
75
130
150
+150
+150
Max
500
500
625
Unit
mA
A
A
A
mW
mW
mW
mW
mW
mW
mA
mA
mA
mA
mA
mA
C
C
C
Unit
K/W
K/W
K/W
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