BF1206 NXP Semiconductors, BF1206 Datasheet - Page 4

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2003 Nov 17
handbook, halfpage
Per MOS-FET unless otherwise specified
V
V
V
V
V
V
V
I
I
I
j
SYMBOL
DSX
G1-S
G2-S
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
Dual N-channel dual-gate MOS-FET
(mW)
P tot
G1
200
150
100
50
0
connects gate 1 to V
0
drain-source breakdown voltage
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
gate cut-off current
gate cut-off current
Fig.2 Power derating curve.
50
PARAMETER
100
GG
= 5 V.
150
T s (°C)
MLE257
200
V
V
V
V
V
V
V
amp. a:
V
amp. b:
V
V
V
G1-S
GS
GS
G2-S
G1-S
DS
DS
G2-S
G2-S
G1-S
G2-S
= 5 V; V
= 5 V; V
= V
= V
= V
= V
= V
= 4 V; V
= 4 V; V
= 5 V; V
= 5 V; V
DS
DS
G2-S
DS
DS
4
= 0; I
= 0; I
= 0; I
= 0; I
G2-S
G1-S
DS
DS
G2-S
G1-S
= 0; I
CONDITIONS
G1-S
G2-S
= 4 V; I
= 5 V; I
= 5 V; R
= 5 V; R
S-G1
S-G2
= V
= V
D
= 10 mA
= 10 mA
= 10 A
DS
DS
= 10 mA
= 10 mA
D
D
= 0
= 0
G
G
= 100 A
= 100 A
= 91 k note 1
= 150 k note 1
6
6
6
0.5
0.5
0.3
0.35
14
9


MIN.
Product specification

10
10
1.5
1.5
1
1
23
17
50
20
MAX.
BF1206
V
V
V
V
V
V
V
mA
mA
nA
nA
UNIT