BF1206 NXP Semiconductors, BF1206 Datasheet - Page 12

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
DYNAMIC CHARACTERISTICS AMPLIFIER b
Common source; T
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2003 Nov 17
y
C
C
C
C
F
G
X
SYMBOL
mod
Dual N-channel dual-gate MOS-FET
ig1-ss
ig2-ss
oss
rss
tr
fs

forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
input level for k = 1%; f
f
unw
L
L
L
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
DS
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= 60 MHz; note 2
= 5 V; I
j
= 25 C
D
CONDITIONS
L
L
S
= B
= B
= 12 mA; unless otherwise specified.
S
S
12
S
L
S
S
= 20 mS; B
= Y
= Y
= B
= 2 mS; B
= 2 mS; B
= 3.3 mS; B
L opt
L opt
S opt
S opt
L opt
; note 1
; note 1
w
; note 1
= 50 MHz;
S
S
S
= 0
= B
= B
S
= B
S opt
S opt
S opt
;
;
;
29










90

100
MIN.
34
1.7
4.2
0.85
15
3.5
1.3
1.4
35
31
27

90
103
TYP.
Product specification
44
2.2


30

1.9
2






MAX.
BF1206
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT