BFT25A T/R NXP Semiconductors, BFT25A T/R Datasheet - Page 7

• Manufacturer Part Number: BFT25A T/R
• Description: RF Bipolar Small Signal NPN 5V 5GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFT25A T/R

• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT25A,215

Philips Semiconductors
9397 750 13399
Product data sheet
Table 8:
Table 9:
f (MHz)
500
f (MHz)
1000
Fig 12. Noise circle figure.
See
Z
Average gain parameter: MSG = 11.2 dB.
o
Noise parameters
Noise parameters
= 50 .
Table
V
1
V
1
CE
CE
9;
(V)
(V)
j
j
0
0.2
0.2
Rev. 04 — 6 July 2004
I
1
I
1
C
C
0.5
0.5
(mA)
(mA)
0.2
10 dB
11.2 dB
MSG
0.5
8 dB
F
1.9
F
2
pot. unst.
region
min
min
(dB)
(dB)
1
1
1
(mag)
0.79
(mag)
0.74
8 dB
2
opt
opt
4 dB
NPN 5 GHz wideband transistor
3 dB
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5
2
2
10
(ang)
4
(ang)
8
mcd109
stability
circle
5
5
10
10
F
BFT25A
min
opt
= 2 dB
R
2.5
R
2.6
n
n
/50
/50
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