BFT25A T/R NXP Semiconductors, BFT25A T/R Datasheet - Page 4

• Manufacturer Part Number: BFT25A T/R
• Description: RF Bipolar Small Signal NPN 5V 5GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFT25A T/R

• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT25A,215

Philips Semiconductors
9397 750 13399
Product data sheet
Fig 1. Power derating curve.
Fig 3. Feedback capacitance as a function of
(mW)
P
(pF)
C
tot
re
0.4
0.3
0.2
0.1
40
30
20
10
0
0
I
collector-base voltage.
C
0
0
= i
c
= 0 A; f = 1 MHz.
1
50
Figure
2
100
5, 6,
3
7
150
and 8, G
4
T
V
s
CB
mbg247
( C)
mcd103
(V)
200
UM
5
Rev. 04 — 6 July 2004
= maximum unilateral power gain; MSG = maximum stable gain.
Fig 2. DC current gain as a function of collector
Fig 4. Transition frequency as a function of collector
(GHz)
h
f
FE
T
100
80
60
40
20
6
4
2
0
0
V
current.
V
current.
10
0
CE
CE
3
= 1 V.
= 1 V; T
10
1
amb
2
= 25 C; f = 500 MHz.
NPN 5 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
2
1
1
3
BFT25A
I
I
C
C
(mA)
(mA)
mcd138
mcd140
10
4
4 of 14