BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 8

• Manufacturer Part Number: BFM505 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFM505 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFM505,115

NXP Semiconductors
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
Note
1. These parameters have not been extracted,
1996 Oct 08
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
Dual NPN wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
the default values are shown.
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER VALUE
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
750.0
0.000
0.897
aA


V
mA
fA



V
mA
aA


A




eV

fF
mV

ps

V
mA
deg
fF
mV


ns
F
mV


UNIT
8
handbook, halfpage
Fig.14 Package equivalent circuit SOT363A
Fig.15 Package capacitance (fF) between
B1
C2
C1
E2
E1
B2
(inductance only).
indicated nodes.
Lead inductances (nH)
LB
27
48
B1
3
1
3
LB
LE
LP
LP
LE
27
17
36
E2
6
C1
E1
T1
0.4
0.6
1.0
36
17
E1
3
T2
C2
E2
48
B2
3
LP
LE
Product specification
C2
6
LB
BFM505
MBG188
MBG189
B2