BF1109,215 NXP Semiconductors, BF1109,215 Datasheet - Page 10

• Manufacturer Part Number: BF1109,215
• Description: RF MOSFET Small Signal Dual N-Channel 11V 30mA 200mW
• Manufacturer: NXP Semiconductors

Specifications of BF1109,215

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 11 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Package / Case: SOT-143B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PACKAGE OUTLINES
1997 Dec 08
Plastic surface-mounted package; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
10
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1109; BF1109R; BF1109WR
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X