CY7C1399BN-15ZXIT Cypress Semiconductor Corp, CY7C1399BN-15ZXIT Datasheet - Page 5

CY7C1399BN-15ZXIT

CY7C1399BN-15ZXIT

Manufacturer Part Number
CY7C1399BN-15ZXIT
Description
CY7C1399BN-15ZXIT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1399BN-15ZXIT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP I
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 001-06490 Rev. *C
Switching Waveforms
Write Cycle No. 1 (WE Controlled)
Write Cycle No. 2 (CE Controlled)
Write Cycle No. 3 (WE Controlled, OE LOW)
Notes:
13. Data I/O is high impedance if OE = V
14. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
15. During this period, the I/Os are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
ADDRESS
DATA I/O
DATA I/O
DATA I/O
CE
WE
WE
WE
CE
OE
CE
NOTE 15
NOTE 15
t
SA
(continued)
IH
t
SA
.
t
HZOE
[8, 13, 14]
t
[8, 13, 14]
HZWE
t
SA
[9, 14]
t
AW
t
AW
t
AW
t
WC
t
t
WC
WC
DATA
t
PWE
t
SD
DATA
DATA
IN
t
SCE
t
SD
t
VALID
SD
IN
IN
VALID
VALID
t
HD
t
t
t
HA
HA
LZWE
t
HA
t
t
HD
HD
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