CY7C1399BN-15VXC Cypress Semiconductor Corp, CY7C1399BN-15VXC Datasheet

IC SRAM 256KBIT 15NS 28SOJ

CY7C1399BN-15VXC

Manufacturer Part Number
CY7C1399BN-15VXC
Description
IC SRAM 256KBIT 15NS 28SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1399BN-15VXC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-1919
CY7C1399BN-15VXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1399BN-15VXC
Manufacturer:
CYPRESSRESS
Quantity:
5 530
Cypress Semiconductor Corporation
Document #: 001-06490 Rev. *A
Features
Functional Description
The CY7C1399BN is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
Selection Guide
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (µA)
• Temperature Ranges
• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed: 12 ns
• Low active power
• Low-power alpha immune 6T cell
• Available in Pb-free and non Pb-free Plastic SOJ and
Logic Block Diagram
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— 180 mW (max.)
TSOP I packages
CE
WE
OE
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
9
[1]
INPUT BUFFER
DECODER
32K x 8
ARRAY
COLUMN
Commercial
Commercial (L)
Industrial
Automotive-A
198 Champion Court
POWER
DOWN
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and tri-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
addressed by the address present on the address pins (A
through A
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399BN is available in 28-pin
standard 300-mil-wide SOJ and TSOP Type I packages.
0
through I/O
500
500
-12
12
55
50
256K (32K x 8) Static RAM
14
San Jose
). Reading the device is accomplished by selecting
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
7
0
1
2
3
4
5
6
7
) is written into the memory location
,
CA 95134-1709
500
500
500
-15
15
50
50
Pin Configurations
GND
I/O
I/O
I/O
A
A
A
A
A
Revised August 31, 2006
A
A
A
A
A
10
11
12
13
14
5
6
7
8
9
0
1
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
CY7C1399BN
Top View
SOJ
28
27
26
25
24
23
22
21
20
19
18
17
16
15
408-943-2600
500
-20
20
45
50
I/O
V
WE
A
A
A
A
OE
A
CE
I/O
I/O
I/O
I/O
CC
4
3
2
1
0
3
7
6
5
4
0
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Related parts for CY7C1399BN-15VXC

CY7C1399BN-15VXC Summary of contents

Page 1

... The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. The CY7C1399BN is available in 28-pin standard 300-mil-wide SOJ and TSOP Type I packages. 32K x 8 ARRAY ...

Page 2

... V , – Max mA, OUT = 1 ≥ Comm’ ≥ V ≤ Comm’l (L) Ind’l Auto ≥ V – 0.3V, Comm’ ≥ V ≤ 0.3V, – 0.3V Comm’l (L) – 0. ≤ 0.3V, CC Ind’l Auto-A CY7C1399BN GND Ambient ...

Page 3

... MHz 3.3V CC [5] ALL INPUT PULSES 90% 90% 10% 10% ≤ [5] -12 Min. Max. Min less than less than t , and t HZCE LZCE HZOE LZOE and t HZWE CY7C1399BN Max. Unit Equivalent to: THÉVENIN EQUIVALENT 167Ω OUTPUT 1.73V -15 -20 Max. Min. Max. Unit ...

Page 4

... Operating Range - L version only) Conditions 2.0V > V – 0.3V > V – 0. < 0.3V IN DATA RETENTION MODE 3.0V > CDR OHA DOE DATA VALID 50% CY7C1399BN Min. Max. Unit 2.0 V µ 3. DATA VALID t HZOE t HZCE HIGH IMPEDANCE t PD ICC 50% ISB Page [+] Feedback ...

Page 5

... If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 15. During this period, the I/Os are in the output state and input signals should not be applied. Document #: 001-06490 Rev PWE t SD DATA VALID SCE DATA VALID IN [9, 14 DATA VALID IN CY7C1399BN LZWE Page [+] Feedback ...

Page 6

... H H High Z Ordering Information Speed (ns) Ordering Code 12 CY7C1399BN-12VC CY7C1399BN-12VXC CY7C1399BN-12ZC CY7C1399BN-12ZXC CY7C1399BNL-12ZC CY7C1399BNL-12ZXC CY7C1399BN-12VXI 15 CY7C1399BN-15VC CY7C1399BN-15VXC CY7C1399BN-15ZC CY7C1399BN-15ZXC CY7C1399BNL-15ZXC CY7C1399BNL-15VXC CY7C1399BN-15VI CY7C1399BN-15VXI CY7C1399BN-15ZI CY7C1399BN-15ZXI CY7C1399BN-15VXA 20 CY7C1399BN-20ZXC Please contact local sales representative regarding availability of these parts. Document #: 001-06490 Rev. *A Mode Deselect/Power-Down Read ...

Page 7

... Cypress against all charges. PIN 0.291 0.330 0.300 0.350 28 OPTION 1 SEATING PLANE 0.120 0.140 0.004 0.025 MIN. 28-Lead TSOP 1 (8x13.4 mm) (51-85071) CY7C1399BN A DETAIL EXTERNAL LEAD DESIGN 0.026 0.032 0.013 0.019 0.014 0.020 OPTION 2 0.007 0.013 0.262 51-85031-*C ...

Page 8

... Document History Page Document Title: CY7C1399BN 256K (32K x 8) Static RAM Document Number: 001-06490 ISSUE ORIG. OF REV. ECN NO. DATE CHANGE ** 423877 See ECN *A 498575 See ECN Document #: 001-06490 Rev. *A DESCRIPTION OF CHANGE NXR New Data Sheet NXR Added Automotive-A range Removed I parameter from DC Electrical Characteristics table OS Updated Ordering Information table ...

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