CY7C09569V-100BBC Cypress Semiconductor Corp, CY7C09569V-100BBC Datasheet - Page 15

• Manufacturer Part Number: CY7C09569V-100BBC
• Description: IC,SYNC SRAM,16KX36,CMOS,BGA,172PIN,PLASTIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C09569V-100BBC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 576K (16K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 172-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Bus Match Pipelined Read-to-Write-to-Read (OE = V
Notes
Document Number: 38-06054 Rev. *E
35. Test conditions used are Load 2.
36. Timing shown is for x18 bus matching; x9 bus matching is similar with 4 cycles between address inputs.
37. See table “Right Port Operation“ for data output on first and subsequent cycles.
38. CNTEN = V
39. CE = ADS = CNTEN = V
40. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
41. BM, SIZE, and BE must be reconfigured 1 cycle before operation is guaranteed. BM, SIZE, and BE should remain static for any particular port configuration.
all the time except when loading the initial external address (i.e. ADS = V
Address
Data
Data
ADS
CLK
R/W
CE
OUT
IN
t
t
SA
t
IL
SW
SC
. In x9 and x18 Bus Matching Burst Mode operations (Write or Read), ADS can toggle on the rising edge of every clock cycle or it can be at V
A
n
t
CH2
t
t
Read
t
CYC2
HW
HC
t
IL
HA
; CNTRST = V
t
CL2
A
n
1st Cycle
(continued)
t
Read
CD2
IH
1st Word
.
A
Q
n+1
n
2nd Cycle
t
Read
CD2
2nd Word
A
Q
n+1
n
Operation
t
No
SD
t
CKHZ
1st Word
IL
D
A
IL
only required when reading or writing the first Byte or Word).
n+2
n+2
)
1st Cycle
[35, 36, 37, 38, 39, 40, 41]
Write
t
HD
2nd Word
A
D
n+2
n+2
2nd Cycle
Write
t
CKLZ
A
n+3
Read
A
n+3
1st Cycle
Read
t
CD2
1st Word
Q
A
n+4
n+3
2nd Cycle
t
DC
CY7C09569V
CY7C09579V
Read
2nd Word
A
Q
Page 15 of 32
n+4
n+3
IH
level
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