CY7C0853V-133BBXI Cypress Semiconductor Corp, CY7C0853V-133BBXI Datasheet - Page 20

• Manufacturer Part Number: CY7C0853V-133BBXI
• Description: CY7C0853V-133BBXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C0853V-133BBXI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 172-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-06070 Rev. *J
Notes
37. Addresses do not have to be accessed sequentially since ADS = CNTEN = V
38. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
39. CE
40. CE
ADDRESS
ADDRESS
Numbers are for reference only
(labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
DATA
DATA
CNTEN
0
0
DATA
= B0 – B3 = R/W = LOW; CE
= OE = B0 – B3 = LOW; CE
ADS
CLK
OUT
CLK
R/W
OUT
OE
CE
IN
t
t
t
SAD
SCN
SA
t
t
t
SW
SC
SA
Q
A
x–1
n
A
t
EXTERNAL
n
ADDRESS
CH2
t
READ
CH2
1
1
t
CYC2
t
t
= CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be completed
= R/W = CNTRST = MRST = HIGH.
t
HCN
HAD
t
HA
t
CYC2
t
t
HW
HC
HA
(continued)
Figure 12. Read-to-Write-to-Read (OE Controlled)
t
CL2
t
CL2
Figure 13. Read with Address Counter Advance
Q
A
x
READ
t
n+1
DC
t
CD2
t
CD2
READ WITH COUNTER
Q
t
OHZ
n
t
SW
t
Q
SD
D
A
n
n+2
n+2
t
HW
t
HD
IL
with CNT/MSK = V
CY7C0850AV,CY7C0851V/CY7C0851AV
t
t
SAD
SCN
Q
WRITE
A
D
n+1
COUNTER HOLD
n+3
n+3
IH
constantly loads the address on the rising edge of the CLK.
t
t
HAD
HCN
[37, 38, 39, 40]
CY7C0852V/CY7C0852AV
CY7C0853V/CY7C0853AV
[39]
A
n+4
t
CD2
Q
READ WITH COUNTER
n+2
READ
Q
n+1
A
n+5
t
CD2
Page 20 of 36
Q
n+4
Q
n+3
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