CY14B101LA-SP45XIT Cypress Semiconductor Corp, CY14B101LA-SP45XIT Datasheet - Page 7

• Manufacturer Part Number: CY14B101LA-SP45XIT
• Description: CY14B101LA-SP45XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-SP45XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. Mode Selection (continued)
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
The AutoStore is reenabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the Software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
Document #: 001-42879 Rev. *K
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
CE
L
L
L
WE
H
H
H
OE
L
L
L
BHE, BLE
X
X
X
[10]
A
If the AutoStore function is disabled or reenabled, a manual
STORE operation (Hardware or Software) must be issued to
save the AutoStore state through subsequent power-down
cycles. The part comes from the factory with AutoStore enabled.
Data Protection
The CY14B101LA/CY14B101NA protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected
CY14B101LA/CY14B101NA is in a write mode (both CE and WE
are LOW) at power-up, after a RECALL or STORE, the write is
inhibited until the SRAM is enabled after t
active). This protects against inadvertent writes during power-up
or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
15
0xB1C7
0x7C1F
0xB1C7
0x7C1F
0x8FC0
0xB1C7
0x7C1F
0x4E38
0x83E0
0x703F
0x4B46
0x4E38
0x83E0
0x703F
0x4E38
0x83E0
0x703F
0x4C63
- A
0
[11]
when
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Nonvolatile
AutoStore
RECALL
STORE
Enable
Mode
V
CC
is
less
Output high-Z
Output high-Z
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
I/O
than
CY14B101NA
CY14B101LA
LZHSB
V
SWITCH
Active I
(HSB to output
Active
Active
Page 7 of 26
Power
.
CC2
If
[12]
[12]
[12]
the
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