CY14B101LA-SP45XIT Cypress Semiconductor Corp, CY14B101LA-SP45XIT Datasheet - Page 10

• Manufacturer Part Number: CY14B101LA-SP45XIT
• Description: CY14B101LA-SP45XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-SP45XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5 V
Note
Document #: 001-42879 Rev. *K
DATA
NV
C
C
Parameter
15. These parameters are guaranteed by design and are not tested.
Parameter
IN
OUT
C
Parameter
Θ
Θ
R
OUTPUT
JC
JA
[15]
[15]
3.0 V
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Input capacitance (except BHE, BLE and HSB) T
Input capacitance (for BHE, BLE and HSB)
Output capacitance (except HSB)
Output capacitance (for HSB)
Data retention
Nonvolatile STORE operations
Description
30 pF
Description
577 Ω
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, in
accordance with
EIA/JESD51.
R1
Test Conditions
Description
789 Ω
Figure 5. AC Test Loads
R2
OUTPUT
V
54-TSOP II 48-SSOP 48-FBGA 44-TSOP II 32-SOIC Unit
A
CC
= 25 °C, f = 1 MHz,
10.13
36.4
= V
3.0 V
CC
(Typ)
Test Conditions
5 pF
37.47
24.71
38.58
11.71
577 Ω
R1
1,000
Min
20
41.74
11.90
CY14B101NA
CY14B101LA
for tristate specs
Max
789 Ω
7
8
7
8
R2
41.55
24.43
Page 10 of 26
Years
Unit
K
Unit
pF
pF
pF
pF
°C/W
°C/W
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