STGD7NB60S STMicroelectronics, STGD7NB60S Datasheet - Page 3

• Manufacturer Part Number: STGD7NB60S
• Description: IGBT Transistors N-Ch 600 Volt 7 Amp
• Manufacturer: STMicroelectronics

Specifications of STGD7NB60S

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: DPAK-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
( ) Pulse width limited by safe operating area
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
Symbol
E
E
t
t
r
r
off
off
(v
(v
t
t
t
t
c
(**)
c
(**)
f
f
off
off
)
)
Cross-Over Time
Off Voltage Rise Time
Fall Time
Turn-off Switching Loss
Cross-Over Time
Off Voltage Rise Time
Fall Time
Turn-off Switching Loss
Parameter
V
R
V
R
T
j
CC
CC
GE
GE
= 125
= 480 V
= 480 V
= 100
= 100
o
C
Test Conditions
V
V
GE
GE
I
I
C
C
= 7 A
= 7 A
= 15 V
= 15 V
Min.
Typ.
2.2
1.2
1.2
3.5
3.8
1.2
1.9
5.3
STGD7NB60S
Max.
Unit
mJ
mJ
s
s
s
s
s
s
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