STGD7NB60S STMicroelectronics, STGD7NB60S Datasheet

IGBT Transistors N-Ch 600 Volt 7 Amp

STGD7NB60S

Manufacturer Part Number
STGD7NB60S
Description
IGBT Transistors N-Ch 600 Volt 7 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of STGD7NB60S

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
DPAK-3
Continuous Collector Current Ic Max
15 A
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGD7NB60S
Manufacturer:
ST
Quantity:
12 500
Part Number:
STGD7NB60S
Manufacturer:
ST
0
Part Number:
STGD7NB60ST4
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1999
STGD7NB60S
Symbol
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL
I
V
V
CM
V
T
P
ECR
CES
I
I
T
stg
GE
C
C
tot
TYPE
( )
j
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
®
IGBTs,
600 V
V
CES
Parameter
with
V
< 1.6 V
CE(sat)
c
= 25
outstanding
GS
o
C
cesat
= 0)
7 A
I
C
)
c
c
= 25
= 100
N-CHANNEL 7A - 600V DPAK
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
Power MESH
-65 to 150
(Suffix "T4")
Value
STGD7NB60S
0.44
600
150
TO-252
20
15
60
55
DPAK
7
20
1
3
IGBT
W/
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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STGD7NB60S Summary of contents

Page 1

... Max. Operating Junction Temperature Pulse width limited by safe operating area November 1999 N-CHANNEL 7A - 600V DPAK V I CE(sat) C < 1 cesat with outstanding = 100 STGD7NB60S Power MESH 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value 600 0.44 -65 to 150 150 IGBT Unit ...

Page 2

... STGD7NB60S THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Collector-Emitter BR(CES) Breakdown Voltage V Emitter-Collector BR(ECR) Breakdown Voltage I Collector cut-off CES ( Gate-Emitter Leakage GES Current ( Symbol Parameter V Gate Threshold GE(th) Voltage ...

Page 3

... Pulse width limited by safe operating area ( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance Test Conditions V = 480 100 480 100 125 C j STGD7NB60S Min. Typ. Max. Unit 2.2 s 1.2 s 1.2 s 3.5 mJ 3.8 s 1.2 s 1.9 s 5.3 mJ 3/8 ...

Page 4

... STGD7NB60S Output Characteristics Transconductance Collector-Emitter On Voltage vs Collector Current 4/8 Transfer Characteristics Collector-Emitter On Voltage vs Temperature Gate Threshold vs Temperature ...

Page 5

... Normalized Breakdown Voltage vs Temperature Gate Charge vs Gate-Emitter Voltage Off Losses vs Temperature Capacitance Variations Off Losses vs Gate Resistance Off Losses vs Collector Current STGD7NB60S 5/8 ...

Page 6

... STGD7NB60S Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 3: Switching Waveforms 6/8 Fig. 2: Test Circuit For Inductive Load Switching ...

Page 7

... STGD7NB60S inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 DETAIL "A" 0068772-B 7/8 ...

Page 8

... STGD7NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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