FF150R12MS4G Infineon Technologies, FF150R12MS4G Datasheet - Page 5

• Manufacturer Part Number: FF150R12MS4G
• Description: IGBT Modules N-CH 1.2KV 225A
• Manufacturer: Infineon Technologies

Specifications of FF150R12MS4G

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 225 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo D
• Ic (max): 150.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoDUAL™ 3

Technische Information / technical information
IGBT-Module
IGBT-modules
#
#
"54 ( T AV2 "5YY ( T AV
"54 ( T AV2 "5YY ( T AV
,A. ( W0) ,2 3- ( 0) 72 ,-. (
,A. ( W0) ,2 3- ( 0) 72 ,-. (
#
#
3- ( T,-.V
3- ( T,-.V
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#
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#
#
3- ( T,-.V
3- ( T,-.V
,A. ( W0) ,2 A5YY (
,A. ( W0) ,2 A5YY (
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350
300
250
200
150
100
60
50
40
30
20
10
50
0
0
$
$
$
$
0
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Q !?E
Q !?E
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200
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$
$
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$
600
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T
T
T
T
T
T
T
15
A pMr
3>`%
3>`%
3>`%
3>`%
FF150R12MS4G
800
3>`%
3>`%
3>`%
3>`%
,
,
,
,
V
V
V
V
V
V
V
V
20
1000 1200 1400
T `#w7V
T `#w7V
T `#w7V
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T `#w7V
T `#w7V
T `#w7V
T `#w7V
25
30
5
%
%
%
%
~@Ha- ( T V
~@Ha- ( T V
~@Ha- ( T V
~@Ha- ( T V
1
1
1
1
3f ( T,fV
3f ( T,fV
3f ( T,fV
3f ( T,fV
0,001
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0,01
300
250
200
150
100
0,1
50
1
0,001
0
0,0
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!
!
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E
E
E
E
~@Ha- 3>`%
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0,01
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Lp C r
Lp r
1,0
1
1
1
1
0
2 II)I
2
3>`%
3>`%
3>`%
3>`%
,f p,r
3>`%
3>`%
3>`%
3>`%
0,1
1,5
Vorläufige Daten
preliminary data
p r
2 ==Z
2
Z
T
T
T
T
2,0
=
T
T
T
T
2
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1
V
V
V
V
I
02 0I
2,5
2
V
V
V
V
I
3,0
10