FF150R12MS4G Infineon Technologies, FF150R12MS4G Datasheet

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FF150R12MS4G

Manufacturer Part Number
FF150R12MS4G
Description
IGBT Modules N-CH 1.2KV 225A
Manufacturer
Infineon Technologies
Datasheets
1.FF150R12MS4G.pdf (8 pages)
2.FF150R12MS4G.pdf (8 pages)

Specifications of FF150R12MS4G

Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
225 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo D
Ic (max)
150.0 A
Vce(sat) (typ)
3.2 V
Technology
IGBT2 Fast
Housing
EconoDUAL™ 3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FF150R12MS4G
Manufacturer:
INFINEON
Quantity:
1 000
Company:
H&T Electronics H&T Electronics
Part Number:
FF150R12MS4G
Quantity:
200
Technische Information / technical information
IGBT-Module
IGBT-modules
EconoDUAL™3 Modul mit schnellem IGBT2 für hochfrequentes Schalten
EconoDUAL™3 module with fast IGBT2 for high switching frequency
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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FF150R12MS4G Summary of contents

Page 1

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules EconoDUAL™3 Modul mit schnellem IGBT2 für hochfrequentes Schalten EconoDUAL™3 module with fast IGBT2 for high switching frequency IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! " > > " Charakteristische Werte / characteristic values ! " ...

Page 2

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values > Charakteristische Werte / characteristic values 9S NTC-Widerstand / NTC-thermistor Charakteristische Werte / characteristic values lmm lmm , $ ? ` ` ` ` ` ` Angaben gemäß gültiger Application Note. Specification according to the valid application note. %&' ( )*+ : ( 0 , ...

Page 3

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules Modul / module > N92 ( c:GF cdROGFO ( )*+ Vorläufige Daten preliminary data ,t/ jwx 0I2 UF-. --z{..z 020 %&' 6G] 0) %& %F > ...

Page 4

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules 3>`% 3>`% 3>`% 3>`% T 3>`% 3>`% T T 3>`% 3>`% T,-. T,-. T,-. T,-. 300 %&' ( )*+ %& )*+ 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 ,-. p 3>`% ! 3>`% ! 3> ...

Page 5

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules # # 3>`% 3>`% 3>`% 3>`% 3>`% 3 3>`% 3>`% 3 3>`% " AV2 "5YY ( T AV " AV2 "5YY ( T AV " AV2 "5YY ( T AV " AV2 "5YY ( T AV , ,-. ( , ,-. ( , ,-. ( , ,-. ( , , , , 60 "542 %& )*+ "5YY2 %& )*+ pMr # # # ...

Page 6

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules # # "ROh ( T3fV "ROh ( T3fV "ROh ( T3fV "ROh ( T3fV A54 ( A54 ( A54 ( A54 ( ) M2 ,-. ( ) M2 ,-. ( ) M2 ,-. ( ) M2 ,-. ( , , , , 15 "ROh2 %& )*+ 100 150 3f p7r % % % % ~@Ha ~@Ha ~@Ha ~@Ha ~@Ha- 1 0,1 0, 0,001 0,001 0,01 0 "ROh ( T AV "ROh ( T AV "ROh ( T AV "ROh ( ...

Page 7

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines Vorläufige Daten preliminary data 7 ...

Page 8

... Technische Information / technical information FF150R12MS4G IGBT-Module IGBT-modules Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes für Ihre Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. ...

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