FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
1400
1200
1000
1200
1000
800
600
400
200
800
600
400
200
0
0
0
0
200
2
Eoff
Eon
Erec
400
E
Eoff
Eon
Erec
on
R
gon
FF 800 R 17 KF6C B2
= f (I
4
= 1,2
600
C
) , E
; R
E
goff
on
off
I
C
=1,8
= 800A , V
800
= f (R
6
6(8)
= f (I
R
I
C
, V
G
C
[A]
CE
[ ]
G
) , E
CE
) , E
= 900V, T
1000
= 900V , T
rec
off
8
= f (I
= f (R
j
= 125°C, V
j
= 125°C, V
1200
C
)
G
) , E
GE
10
GE
= ± 15V
rec
= ± 15V
1400
= f (R
G
12
1600
)
1800
FF800R17KF6C B2
14