FF800R17KF6C_B2 Infineon Technologies, FF800R17KF6C_B2 Datasheet - Page 5

• Manufacturer Part Number: FF800R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
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0
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0,0
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Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
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0,5
Tvj=25°C
Tvj=125°C
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FF 800 R 17 KF6C B2
Tj = 25°C
Tj = 125°C
1,0
8
5(8)
V
V
GE
F
1,5
[V]
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[V]
I
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C
V
= f (V
CE
2,0
= 20V
GE
)
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I
2,5
F
= f (V
12
F
)
FF800R17KF6C B2
3,0
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