MUN5312DW1T2G ON Semiconductor, MUN5312DW1T2G Datasheet - Page 27

• Manufacturer Part Number: MUN5312DW1T2G
• Description: Digital Transistors 100mA Complementary 50V NPN & PNP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5312DW1T2G

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 385mW
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR
1
1000
V
= 10 V
I
/I
= 10
CE
C
B
75°C
100
T
= −25°C
0.1
75°C
A
25°C
−25°C
25°C
0.01
10
0.001
1
0
5
10
15
20
25
30
1
10
100
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 106. V
versus I
Figure 107. DC Current Gain
CE(sat)
C
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