MUN5312DW1T2G ON Semiconductor, MUN5312DW1T2G Datasheet - Page 11

• Manufacturer Part Number: MUN5312DW1T2G
• Description: Digital Transistors 100mA Complementary 50V NPN & PNP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5312DW1T2G

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 385mW
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR
B
= 10
Figure 29. Output Capacitance
10
V
Figure 27. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
20
100
T
0.1
10
A
1
= -25°C
0
Figure 31. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
= -25°C
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
11
75°C
25°C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 30. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 28. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
-25°C
8
25°C
25°C
-25°C
9
100
10