EL357N-G Everlight Electronics CO., LTD, EL357N-G Datasheet - Page 11

• Manufacturer Part Number: EL357N-G
• Description: Transistor Output Optocouplers 50-600CTR 3750Vrms -55 to +100 Op Temp
• Manufacturer: Everlight Electronics CO., LTD
• Series: -r

Specifications of EL357N-G

• Forward Current: 20 mA
• Maximum Input Diode Current: 20 mA
• Maximum Reverse Diode Voltage: 4 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.2 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 50 % to 600 %
• Maximum Forward Diode Voltage: 1.4 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOP-4
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 50% @ ±5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 200mV
• Output Type: Transistor
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 PIN ULTRA SMALL SOP
PHOTOTRANSISTOR PHOTOCOUPLER
DISCLAIMER
1. The specifications in this datasheet may be changed without notice. EVERLIGHT reserves the authority
2. When using this product, please observe the absolute maximum ratings and the instructions for use as
3. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in
any form is prohibited without the specific consent of EVERLIGHT.
Everlight Electronics Co., Ltd.
Document No：DPC-0000014
on material change for above specification.
outlined in this datasheet. EVERLIGHT assumes no responsibility for any damage resulting from use of
the product which does not comply with the absolute maximum ratings and the instructions included in this
datasheet.
Rev. 4
11
EL357N-G Series
December 28, 2009
http://www.everlight.com