EL357N-G Everlight Electronics CO., LTD, EL357N-G Datasheet - Page 10

• Manufacturer Part Number: EL357N-G
• Description: Transistor Output Optocouplers 50-600CTR 3750Vrms -55 to +100 Op Temp
• Manufacturer: Everlight Electronics CO., LTD
• Series: -r

Specifications of EL357N-G

• Forward Current: 20 mA
• Maximum Input Diode Current: 20 mA
• Maximum Reverse Diode Voltage: 4 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.2 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 50 % to 600 %
• Maximum Forward Diode Voltage: 1.4 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOP-4
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 50% @ ±5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 200mV
• Output Type: Transistor
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 PIN ULTRA SMALL SOP
PHOTOTRANSISTOR PHOTOCOUPLER
Solder Reflow Temperature Profile
Everlight Electronics Co., Ltd.
Document No：DPC-0000014
217°C
200°C
150°C
1-3 °C/Sec Max
Rev. 4
70 – 170 Sec
TIME (S)
1-3 °C/Sec Max
10
60 – 140 Sec
260 °C (peak)
EL357N-G Series
>255 °C (30s Max)
December 28, 2009
http://www.everlight.com