CNY75B Vishay, CNY75B Datasheet - Page 4

• Manufacturer Part Number: CNY75B
• Description: OPTOCOUPLER, TRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of CNY75B

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
Input
Output
Coupler
Insulation Rated Parameters
www.vishay.com
4
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
95 10923
275
250
225
200
175
150
125
100
75
50
25
0
0
Parameter
Parameter
Parameter
Parameter
I
si
25
T
amb
(mA)
Figure 1. Derating diagram
50
- Ambient Temperature ( °C )
75
P
si
(mW)
100 125 150 175
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
Tr
IO
IO
IO
= 60 s, t
= 500 V
= 500 V, T
= 500 V, T
test
Test condition
Test condition
Test condition
Test condition
test
= 1 s
amb
amb
= 10 s,
≤ 100 °C
≤ 150 °C
Figure 2. Test pulse diagram for sample test according to DIN EN
Symbol
Symbol
Symbol
Symbol
V
V
P
13930
V
V
R
R
R
V
IOTM
T
IOTM
I
diss
V
V
F
pd
pd
IOWM
IO
IO
IO
si
IOTM
IORM
V
Pd
0
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
1
10
10
Min
Min
Min
Min
10
1.6
1.3
6
12
11
9
t
t
t
1
3
stres
t
test
, t
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
Typ.
Typ.
Typ.
Typ.
Document Number 83536
Max
Max
Max
Max
t
130
265
150
2
6
t
3
Rev. 1.7, 26-Oct-04
t
t
stres
test
t
t
4
Unit
Unit
mW
Unit
Unit
mA
kV
°C
kV
kV
kV
Ω
Ω
Ω