CNY75B Vishay, CNY75B Datasheet - Page 3

• Manufacturer Part Number: CNY75B
• Description: OPTOCOUPLER, TRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of CNY75B

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Switching Characteristics
Document Number 83536
Rev. 1.7, 26-Oct-04
Forward voltage
Reverse current
Junction capacitance
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector-emitter leakage
current
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
amb
C
CNY75GC
Parameter
CNY75GA
CNY75GB
condition
/I
Symbol
F
Test
Unit
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
Current
mA
10
10
10
I
F
Delay
2.0
2.5
2.8
µs
t
D
I
V
V
I
I
I
V
I
V
R
f = 1 MHz
V
V
F
C
C
E
F
R
R
CE
CE
CE
CE
L
= 50 mA
= 100 µA
= 10 mA, I
= 100 µA
= 1 mA
= 100 Ω
= 6 V
= 0, f = 1 MHz
= 20 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Rise time
Test condition
Test condition
Test condition
Test condition
F
F
F
2.5
3.0
4.2
µs
t
C
F
r
= 10 mA,
= 1 mA
= 10 mA
= 0
= 1 mA
V
CC
(see figure 3)
= 5 V, R
Storage
0.3
0.3
0.3
µs
t
S
L
= 100 Ω
CNY75A/ B/ C/ GA/ GB/ GC
CNY75GC
CNY75GC
CNY75GA
CNY75GB
CNY75GA
CNY75GB
Symbol
Symbol
Symbol
Fall time
V
V
V
V
I
CEsat
CEO
V
CBO
CEO
ECO
C
Part
I
C
f
2.7
3.7
4.7
µs
R
c
F
t
k
j
f
Symbol
Turn-on
Min
Min
Min
CTR
CTR
CTR
CTR
CTR
CTR
time
90
90
4.5
5.5
7.0
t
µs
7
on
Min
100
160
15
30
60
63
Turn-off
Vishay Semiconductors
1.25
Typ.
Typ.
Typ.
110
time
0.3
50
3.0
4.0
5.0
t
µs
off
Typ.
V
Turn-on
CC
Max
Max
Max
150
time
10.0
16.5
11.0
1.6
0.3
10
t
µs
on
= 5 V, R
(see figure 4)
Max
1.25
200
320
www.vishay.com
L
Turn-off
= 1.0 kΩ
25.0
20.0
37.5
Unit
Unit
Unit
kHz
time
µA
pF
nA
pF
t
µs
V
V
V
V
V
off
Unit
%
%
%
%
%
%
3