SI9433BDY-T1-GE3 Vishay, SI9433BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI9433BDY-T1-GE3
• Description: P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI9433BDY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: 12V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI9433BDY-T1-GE3TR

Si9433BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
0.6
0.4
0.2
0.0
0.2
0.4
0.01
-
0.1
50
2
1
10 -
-
0.02
4
25
0.05
0.2
0.1
Duty Cycle = 0.5
0
T
Threshold Voltage
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
10
0.1
100
10 -
1
0.1
2
Limited by R
* V
125
Limited
I
D(on)
DS
Single Pulse
T
> minimum V
A
150
= 25 °C
V
Square Wave Pulse Duration (s)
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10 -
*
1
BVDSS Limited
GS
at which R
I
DM
DS(on)
10
Limited
1
50
40
30
20
10
0.001
0
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
Time (s)
t
A
1
S09-0870-Rev. B, 18-May-09
= P
t
2
0.1
Document Number: 72755
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 80 °C/W
1
600
10