SI9433BDY-T1-GE3 Vishay, SI9433BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI9433BDY-T1-GE3
• Description: P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI9433BDY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: 12V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI9433BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72755
S09-0870-Rev. B, 18-May-09
0.15
0.12
0.09
0.06
0.03
0.00
0.1
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 6.2 A
V
0.2
On-Resistance vs. Drain Current
= 6 V
2
GS
4
T
V
= 2.7 V
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
4
I
D
Gate Charge
- Drain Current (A)
8
0.6
6
12
0.8
8
T
V
J
GS
= 25 °C
= 4.5 V
16
10
1.0
20
12
1.2
1500
1200
0.15
0.12
0.09
0.06
0.03
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
rss
= 6.2 A
= 4.5 V
4
2
V
V
DS
0
T
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
4
C
50
C
Vishay Siliconix
oss
iss
Si9433BDY
12
I
D
6
75
= 6.2 A
www.vishay.com
100
16
8
125
150
20
10
3