SI4880DY-T1-E3 Vishay, SI4880DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4880DY-T1-E3
• Description: N-Ch MOSFET SO-8 30V 8.5mohm @ 10V Qg=25nC
• Manufacturer: Vishay

Specifications of SI4880DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4880DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70857.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.0
0.6
0.4
0.2
50
10
0.01
1
- 50
0.1
0
2
1
10
-4
Source-Drain Diode Forward Voltage
- 25
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
Single Pulse
= 150 °C
V
SD
0
0.4
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
- Temperature (°C)
25
10
0.6
-3
50
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
0.8
= 250 µA
75
T
J
1.0
= 25 °C
100
10
-2
1.2
125
1.4
150
Square Wave Pulse Duration (s)
10
-1
0.10
0.08
0.06
0.04
0.02
1
60
50
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.1
Single Pulse Power
10
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
– T
Time (s)
t
I
A
S09-0869-Rev. C, 18-May-09
1
D
= P
= 13 A
t
2
Document Number: 70857
DM
1
Z
6
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
8
10
600
10
30