IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 5

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
40A
35A
30A
25A
20A
15A
10A
5 A
0 A
5A
0A
0 V
0V
V
V
GE
CE
=20V
11V
13V
15V
V
,
(T
(V
9V
7V
COLLECTOR
GE
2 V
j
CE
T
= 25°C)
,
J
=20V)
GATE-EMITTER VOLTAGE
= 1 7 5 °C
1V
2 5 °C
4 V
-
EMITTER VOLTAGE
2V
6 V
3V
8 V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
40A
35A
30A
25A
20A
15A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
5A
0A
0V
0°C
®
V
GE
V
Series
CE
=20V
11V
15V
13V
(T
saturation voltage as a function of
junction temperature
(V
T
,
9V
7V
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
1V
= 15V)
50°C
-
EMITTER VOLTAGE
IGB15N60T
2V
100°C
Rev. 2.4 Oct. 07
3V
I
I
I
C
150°C
C
C
=15A
=7.5A
=30A
q