IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 10

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

IGB15N60T
q
®
TrenchStop
Series
PG-TO263-3-2
Power Semiconductors
10
Rev. 2.4 Oct. 07