BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 9

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E4R0-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae451
C
C
C
(V)
iss
oss
rss
10
Rev. 02 — 30 August 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
I
(V)
S
GS
120
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
50
0.3
T
j
= 175 °C
BUK6E4R0-75C
100
14V
N-channel TrenchMOS FET
0.6
150
V
DS
0.9
= 60V
T
j
© NXP B.V. 2010. All rights reserved.
200
= 25 °C
003aae452
V
003aae425
Q
SD
G
(nC)
(V)
250
1.2
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