BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 11

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
8. Revision history
Table 7.
BUK6E4R0-75C
Product data sheet
Document ID
BUK6E4R0-75C v.2
Modifications:
BUK6E4R0-75C v.1
Revision history
Release date
20100830
20100709
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
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BUK6E4R0-75C
N-channel TrenchMOS FET
Supersedes
BUK6E4R0-75C v.1
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© NXP B.V. 2010. All rights reserved.
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