BSP299L6327 Infineon Technologies, BSP299L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP299L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP299L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
C
DS (on)
DS (on)
10
10
10
10
nF
10
-1
-2
8
7
6
5
4
3
2
1
0
-60
1
0
0
DS
= ( T
)
D
5
j
GS
)
= 0.4 A, V
-20
=0V, f = 1 MHz
10
20
15
GS
98%
typ
20
= 10 V
60
25
100
30
T
°C
V
V
j
C
C
C
DS
iss
oss
rss
160
40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
-1
-2
-60
0.0
SD
1
0
= ( T
)
0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
0.8
DS
20
, I
1.2
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
98%
typ
2%
= 1 mA
1.6
60
2.0
100
2.4
Sep-12-1996
BSP 299
T
V
°C
j
SD
V
160
3.0