BSP299L6327 Infineon Technologies, BSP299L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP299L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP299L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

Power dissipation
P
P
Safe operating area I
parameter : D = 0, T
Semiconductor Group
tot
tot
= ( T
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
W
0
A
)
20
40
C
60
=25°C
D
=f( V
80
DS
100
)
120
T
°C
A
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JA
D
= ( T
K/W
10
10
10
10
10
0.45
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
= ( t
A
-1
-2
-3
-4
-5
2
1
0
A
10
0
)
-8
p
)
20
10
GS
single pulse
-7
p
40
10
10 V
/ T
-6
60
10
-5
80
10
-4
100
10
-3
120
10
D = 0.50
Sep-12-1996
BSP 299
-2
T
t
°C
p
0.20
0.10
0.05
0.02
0.01
10
A
-1
s
160
10
0